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High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

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High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

Auteurs : RBID : Pascal:03-0315184

Descripteurs français

Pascal (Inist)
- 4255P, 8535B, 4260D, Etude expérimentale, Indium composé, Gallium arséniure, Semiconducteur III-V, Puits quantique semiconducteur, Laser puits quantique, Résonateur cavité laser, Mesure dispositif semiconducteur.

English descriptors

KwdEn :
- Experimental study, Gallium arsenides, III-V semiconductors, Indium compounds, Laser cavity resonators, Quantum well lasers, Semiconductor device measurement, Semiconductor quantum wells.

Abstract

Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In_0.4Ga_0.6As_0.995N_0.005 quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 μm, with a threshold-current density of 220 A/cm² for 2000 μm cavity-length (L_cav) devices. A threshold current density of only 615 A/cm² was achieved for cw operation at a temperature of 100°C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20°C. © 2003 American Institute of Physics.

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Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy</title>
<author><name sortKey="Tansu, Nelson" uniqKey="Tansu N">Nelson Tansu</name>
<affiliation><inist:fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA 18015</s1>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="02"><s1>and Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1>
<sZ>1 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
<wicri:cityArea>and Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea>
</affiliation>
<affiliation wicri:level="2"><inist:fA14 i1="04"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
<wicri:cityArea>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Quandt, Andrew" uniqKey="Quandt A">Andrew Quandt</name>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Alfalight, Inc., 1832 Wright Street, Madison, Wisconsin 53704</s1>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
<wicri:cityArea>Alfalight, Inc., 1832 Wright Street, Madison</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Kanskar, Manoj" uniqKey="Kanskar M">Manoj Kanskar</name>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Alfalight, Inc., 1832 Wright Street, Madison, Wisconsin 53704</s1>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
<wicri:cityArea>Alfalight, Inc., 1832 Wright Street, Madison</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Mulhearn, William" uniqKey="Mulhearn W">William Mulhearn</name>
<affiliation wicri:level="2"><inist:fA14 i1="03"><s1>Alfalight, Inc., 1832 Wright Street, Madison, Wisconsin 53704</s1>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Wisconsin</region>
</placeName>
<wicri:cityArea>Alfalight, Inc., 1832 Wright Street, Madison</wicri:cityArea>
</affiliation>
</author>
<author><name sortKey="Mawst, Luke J" uniqKey="Mawst L">Luke J. Mawst</name>
<affiliation wicri:level="2"><inist:fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA 18015</s1>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</inist:fA14>
<country xml:lang="fr">États-Unis</country>
<placeName><region type="state">Pennsylvanie</region>
</placeName>
<wicri:cityArea>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem</wicri:cityArea>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">03-0315184</idno>
<date when="2003-07-07">2003-07-07</date>
<idno type="stanalyst">PASCAL 03-0315184 AIP</idno>
<idno type="RBID">Pascal:03-0315184</idno>
<idno type="wicri:Area/Main/Corpus">00D029</idno>
<idno type="wicri:Area/Main/Repository">00C191</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0003-6951</idno>
<title level="j" type="abbreviated">Appl. phys. lett.</title>
<title level="j" type="main">Applied physics letters</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term>
<term>Gallium arsenides</term>
<term>III-V semiconductors</term>
<term>Indium compounds</term>
<term>Laser cavity resonators</term>
<term>Quantum well lasers</term>
<term>Semiconductor device measurement</term>
<term>Semiconductor quantum wells</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>4255P</term>
<term>8535B</term>
<term>4260D</term>
<term>Etude expérimentale</term>
<term>Indium composé</term>
<term>Gallium arséniure</term>
<term>Semiconducteur III-V</term>
<term>Puits quantique semiconducteur</term>
<term>Laser puits quantique</term>
<term>Résonateur cavité laser</term>
<term>Mesure dispositif semiconducteur</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In<sub>0.4</sub>
Ga<sub>0.6</sub>
As<sub>0.995</sub>
N<sub>0.005</sub>
 quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 μm, with a threshold-current density of 220 A/cm<sup>2</sup>
 for 2000 μm cavity-length (L<sub>cav</sub>
) devices. A threshold current density of only 615 A/cm<sup>2</sup>
 was achieved for cw operation at a temperature of 100°C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20°C. © 2003 American Institute of Physics.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0003-6951</s0>
</fA01>
<fA02 i1="01"><s0>APPLAB</s0>
</fA02>
<fA03 i2="1"><s0>Appl. phys. lett.</s0>
</fA03>
<fA05><s2>83</s2>
</fA05>
<fA06><s2>1</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy</s1>
</fA08>
<fA11 i1="01" i2="1"><s1>TANSU (Nelson)</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>QUANDT (Andrew)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>KANSKAR (Manoj)</s1>
</fA11>
<fA11 i1="04" i2="1"><s1>MULHEARN (William)</s1>
</fA11>
<fA11 i1="05" i2="1"><s1>MAWST (Luke J.)</s1>
</fA11>
<fA14 i1="01"><s1>Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Sinclair Laboratory, 7 Asa Drive, Bethlehem, PA 18015</s1>
<sZ>1 aut.</sZ>
<sZ>5 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>and Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1>
<sZ>1 aut.</sZ>
</fA14>
<fA14 i1="03"><s1>Alfalight, Inc., 1832 Wright Street, Madison, Wisconsin 53704</s1>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
<sZ>4 aut.</sZ>
</fA14>
<fA14 i1="04"><s1>Reed Center for Photonics, Department of Electrical Computer Engineering, University of Wisconsin-Madison, 1415 Engineering Drive, Madison, Wisconsin 53706-1691</s1>
</fA14>
<fA20><s1>18-20</s1>
</fA20>
<fA21><s1>2003-07-07</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>10020</s2>
</fA43>
<fA44><s0>8100</s0>
<s1>© 2003 American Institute of Physics. All rights reserved.</s1>
</fA44>
<fA47 i1="01" i2="1"><s0>03-0315184</s0>
</fA47>
<fA60><s1>P</s1>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Applied physics letters</s0>
</fA64>
<fA66 i1="01"><s0>USA</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Comtinuous-wave (cw) operation of organometallic vapor phase epitaxy-grown In<sub>0.4</sub>
Ga<sub>0.6</sub>
As<sub>0.995</sub>
N<sub>0.005</sub>
 quantum well (QW) lasers has been realized, at a room-temperature near-threshold emission wavelength of 1.295 μm, with a threshold-current density of 220 A/cm<sup>2</sup>
 for 2000 μm cavity-length (L<sub>cav</sub>
) devices. A threshold current density of only 615 A/cm<sup>2</sup>
 was achieved for cw operation at a temperature of 100°C, with an emission wavelength of 1.331 μm. A maximum cw-output power of 1.8 W was obtained for InGaAsN QW lasers with cavity lengths of 1000 and 2000 μm, at a heat-sink temperature of 20°C. © 2003 American Institute of Physics.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B40B55P</s0>
</fC02>
<fC02 i1="02" i2="X"><s0>001D03F18</s0>
</fC02>
<fC02 i1="03" i2="3"><s0>001B40B60D</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>4255P</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>8535B</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>4260D</s0>
<s2>PAC</s2>
<s4>INC</s4>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Etude expérimentale</s0>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Experimental study</s0>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Indium composé</s0>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Indium compounds</s0>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Gallium arséniure</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Gallium arsenides</s0>
<s2>NK</s2>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Semiconducteur III-V</s0>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>III-V semiconductors</s0>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Puits quantique semiconducteur</s0>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor quantum wells</s0>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Laser puits quantique</s0>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Quantum well lasers</s0>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Résonateur cavité laser</s0>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Laser cavity resonators</s0>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Mesure dispositif semiconducteur</s0>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Semiconductor device measurement</s0>
</fC03>
<fN21><s1>209</s1>
</fN21>
<fN47 i1="01" i2="1"><s0>0326M000024</s0>
</fN47>
</pA>
</standard>
</inist>
</record>

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High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

High-performance and high-temperature continuous-wave-operation 1300 nm InGaAsN quantum well lasers by organometallic vapor phase epitaxy

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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